期刊
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
卷 109, 期 3, 页码 671-674出版社
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1119010109
关键词
density functional theory; topological edge state
资金
- National Research Foundation (NRF) of Korea
- Korea government Ministry of Education, Science and Technology ( MEST) [2006-0093853]
- Korea Institute of Science and Technology Information (KISTI)
- National Research Foundation of Korea [과06A1102] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Using first-principles calculations, we show that topological quantum phase transitions are driven by external electric fields in thin films of Sb2Te3. The film, as the applied electric field normal to its surface increases, is transformed from a normal insulator to a topological insulator or vice versa depending on the film thickness. We identify the band topology by directly calculating the Z(2) invariant from electronic wave functions. The dispersion of edge states is also found to be consistent with the bulk band topology in view of the bulk-boundary correspondence. We present possible applications of the topological phase transition as an on/off switch of the topologically protected edge states in nano-scale devices.
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