4.8 Article

Microscopic origins for stabilizing room-temperature ferromagnetism in ultrathin manganite layers

出版社

NATL ACAD SCIENCES
DOI: 10.1073/pnas.1005693107

关键词

electron energy loss spectroscopy; manganites; scanning transmission electron microscopy

资金

  1. Office of Naval research Epitaxial Multifunctional Materials and Applications Multidisciplinary University Research Initiative
  2. Cornell Center for Materials Research (National Science Foundation) [DMR-0520404, IMR-0417392]
  3. Korean Research Foundation [KRF-2008-314-C00094]
  4. Korean Ministry of Education, Science and Technology through the Korea Science and Engineering Foundation [2009-0059220]
  5. National Research Foundation of Korea [2008-314-C00094] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

La(0.7)Sr(0.3)MnO(3) is a conducting ferromagnet at room temperature. Combined with thin SrTiO(3) layers, the resulting heterostructures could be used as highly spin-polarized magnetic-tunnel-junction memories. However, when shrunk to dimensions below an apparent critical thickness, the structures become insulating and ferromagnetic ordering is suppressed. Interface spin and charge modulations are thought to create an interfacial dead layer, thus fundamentally limiting the use of this material in atomic-scale devices. The thickness of this dead layer, and whether it is intrinsic, is still controversial. Here we use atomic-resolution electron spectroscopy to demonstrate that the degradation of the magnetic and transport properties of La(0.7)Sr(0.3)MnO(3)/SrTiO(3) multilayers correlates with atomic intermixing at the interfaces, and the presence of extended two-dimensional cation defects in the La(0.7)Sr(0.3)MnO(3) layers (in contrast to three-dimensional precipitates in thick films). When these extrinsic defects are eliminated, metallic ferromagnetism at room temperature can be stabilized in five-unit-cell-thick manganite layers in superlattices, placing the upper limit for any intrinsic dead layer at two unit cells per interface.

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