期刊
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
卷 106, 期 15, 页码 6065-6070出版社
NATL ACAD SCIENCES
DOI: 10.1073/pnas.0811923106
关键词
organic semiconductors; single crystals; solution processing; alignment
资金
- Ministry of Education and Human Resources Development [KRF-2006-352-D00066]
- National Science Foundation (NSF)-Division of Materials Research (DMR) solid-state chemistry [DMR-0705687]
- Sloan Research Fellowship
- Samsung Advanced Institute of Technology
- Center for Polymeric Interfaces and Macromolecular Assemblies (NSF-Center Materials Research Science and Engineering Center) [DMR-0213618]
The development of solution-processable, high-performance n-channel organic semiconductors is crucial to realizing low-cost, all-organic complementary circuits. Single-crystalline organic semiconductor nano/microwires (NWs/MWs) have great potential as active materials in solution-formed high-performance transistors. However, the technology to integrate these elements into functional networks with controlled alignment and density lags far behind their inorganic counterparts. Here, we report a solution-processing approach to achieve high-performance air-stable n-channel organic transistors (the field-effect mobility (mu) up to 0.24 cm(2)/Vs for MW networks) comprising high mobility, solution-synthesized single-crystalline organic semiconducting MWs (mu as high as 1.4 cm(2)/Vs for individual MWs) and a filtration-and-transfer (FAT) alignment method. The FAT method enables facile control over both alignment and density of MWs. Our approach presents a route toward solution-processed, high-performance organic transistors and could be used for directed assembly of various functional organic and inorganic NWs/MWs.
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