4.7 Article

Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications

期刊

PROCEEDINGS OF THE IEEE
卷 101, 期 7, 页码 1670-1688

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2013.2247971

关键词

Device engineering; device scalability; edge disorder; graphene; interface traps; low-frequency noise; metrology; sensing applications; variability effects

资金

  1. SRC-DARPA MARCO Focus Center on Functional Engineered Nano Architectonics (FENA)
  2. U.S. Department of Energy [DE-AC02-05CH11231]
  3. Division of Computing and Communication Foundations
  4. Direct For Computer & Info Scie & Enginr [1217382] Funding Source: National Science Foundation

向作者/读者索取更多资源

Variability effects in graphene can result from the surrounding environment and the graphene material itself, which form a critical issue in examining the feasibility of graphene devices for large-scale production. From the reliability and yield perspective, these variabilities cause fluctuations in the device performance, which should be minimized via device engineering. From the metrology perspective, however, the variability effects can function as novel probing mechanisms, in which the signal fluctuations'' can be useful for potential sensing applications. This paper presents an overview of the variability effects in graphene, with emphasis on their challenges and opportunities for device engineering and applications. The discussion can extend to other thin-film, nanowire, and nanotube devices with similar variability issues, forming general interest in evaluating the promise of emerging technologies.

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