期刊
PROCEEDINGS OF THE IEEE
卷 101, 期 12, 页码 2498-2533出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2013.2252317
关键词
Adder; beyond complementary metal-oxide-semiconductor (beyond-CMOS); computational throughput; electronics; integrated circuits; logic; power dissipation; spintronics
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the complementary metal-oxide-semiconductor (CMOS) roadmap. Structure and operational principles of these devices are described. Theories used for benchmarking these devices are overviewed, and a general methodology is described for consistent estimates of the circuit area, switching time, and energy. The results of the comparison of the NRI logic devices using these benchmarks are presented.
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