期刊
PROCEEDINGS OF THE IEEE
卷 101, 期 7, 页码 1638-1652出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2013.2251311
关键词
Boron nitride (BN); circuits; graphene; molybdenum disulfide (MoS2); transistors
资金
- Army Research Laboratory
- MIT-ARMY Institute for Soldier Nanotechnologies
- Young Investigator Program
- GATE MURI program of the U.S. Office of Naval Research
Recent experiments since the discovery of monolayer graphite or graphene have led to an exciting revival in the interest in the electronic applications for graphene, as well as other 2-D materials such as hexagonal boron nitride (hBN) and molybdenum disulfide (MoS2). These layered materials serve as an exciting new platform for flexible and transparent electronics where surfaces can be enriched with new functionality. This paper aims to provide an overview behind these new class of materials ranging upon important issues for electronic integration including synthesis all the way to current state-of-the-art circuits and devices made from these materials.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据