4.7 Article

Large-Area 2-D Electronics: Materials, Technology, and Devices

期刊

PROCEEDINGS OF THE IEEE
卷 101, 期 7, 页码 1638-1652

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2013.2251311

关键词

Boron nitride (BN); circuits; graphene; molybdenum disulfide (MoS2); transistors

资金

  1. Army Research Laboratory
  2. MIT-ARMY Institute for Soldier Nanotechnologies
  3. Young Investigator Program
  4. GATE MURI program of the U.S. Office of Naval Research

向作者/读者索取更多资源

Recent experiments since the discovery of monolayer graphite or graphene have led to an exciting revival in the interest in the electronic applications for graphene, as well as other 2-D materials such as hexagonal boron nitride (hBN) and molybdenum disulfide (MoS2). These layered materials serve as an exciting new platform for flexible and transparent electronics where surfaces can be enriched with new functionality. This paper aims to provide an overview behind these new class of materials ranging upon important issues for electronic integration including synthesis all the way to current state-of-the-art circuits and devices made from these materials.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据