4.7 Article

The Fourth Element

期刊

PROCEEDINGS OF THE IEEE
卷 100, 期 6, 页码 1920-1927

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2012.2190814

关键词

Fourth element; Hodgkin-Huxley axon circuit model; memristor; pinched hystersis loops; alpha-beta circuit elements

资金

  1. AFOSR [FA 9550-10-1-0290]

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This tutorial clarifies the axiomatic definition of (nu((alpha)), i((beta))) circuit elements via a lookup table dubbed an A-pad, of admissible (nu, i) signals measured via Gedanken probing circuits. The (nu((alpha)), i((beta))) elements are ordered via a complexity metric. Under this metric, the memristor emerges naturally as the fourth element, characterized by a state-dependent Ohm's law. A logical generalization to memristive devices reveals a common fingerprint consisting of a dense continuum of pinched hysteresis loops whose area decreases with the frequency omega and tends to a straight line as omega -> infinity, for all bipolar periodic signals and for all initial conditions. This common fingerprint suggests that the term memristor be used henceforth as a moniker for memristive devices.

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