期刊
PROCEEDINGS OF THE IEEE
卷 100, 期 6, 页码 1920-1927出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2012.2190814
关键词
Fourth element; Hodgkin-Huxley axon circuit model; memristor; pinched hystersis loops; alpha-beta circuit elements
资金
- AFOSR [FA 9550-10-1-0290]
This tutorial clarifies the axiomatic definition of (nu((alpha)), i((beta))) circuit elements via a lookup table dubbed an A-pad, of admissible (nu, i) signals measured via Gedanken probing circuits. The (nu((alpha)), i((beta))) elements are ordered via a complexity metric. Under this metric, the memristor emerges naturally as the fourth element, characterized by a state-dependent Ohm's law. A logical generalization to memristive devices reveals a common fingerprint consisting of a dense continuum of pinched hysteresis loops whose area decreases with the frequency omega and tends to a straight line as omega -> infinity, for all bipolar periodic signals and for all initial conditions. This common fingerprint suggests that the term memristor be used henceforth as a moniker for memristive devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据