4.7 Article

Device and Architecture Outlook for Beyond CMOS Switches

期刊

PROCEEDINGS OF THE IEEE
卷 98, 期 12, 页码 2169-2184

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2010.2066530

关键词

Nanoarchitectures; nanomagnet logic; post-complementary metal-oxide-semiconductor (CMOS); pseudospin; quantum-dot cellular-automata architectures (QCAs); quantum-dot cellular automata; spin; tunnel field-effect transistor (TFET); tunneling

资金

  1. Semiconductor Research Corporation, Nanoelectronics Research Institute (SRC-NRI)
  2. National Institute of Standards and Technology (NIST)
  3. National Science Foundation (NSF)

向作者/读者索取更多资源

Sooner or later, fundamental limitations destine complementary metal-oxide-semiconductor (CMOS) scaling to a conclusion. A number of unique switches have been proposed as replacements, many of which do not even use electron charge as the state variable. Instead, these nanoscale structures pass tokens in the spin, excitonic, photonic, magnetic, quantum, or even heat domains. Emergent physical behaviors and idiosyncrasies of these novel switches can complement the execution of specific algorithms or workloads by enabling quite unique architectures. Ultimately, exploiting these unusual responses will extend throughput in high-performance computing. Alternative tokens also require new transport mechanisms to replace the conventional chip wire interconnect schemes of charge-based computing. New intrinsic limits to scaling in post-CMOS technologies are likely to be bounded ultimately by thermodynamic entropy and Shannon noise.

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