期刊
PROCEEDINGS OF THE IEEE
卷 98, 期 7, 页码 1151-1161出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2009.2034397
关键词
Current collapse; GaN power transistor; heterojunction field-effect transistor (HFET); MOS-HFET
In this paper, GaN power transistors on Si substrates for power switching application are reported. GaN heterojunction field-effect transistor (HFET) structure on Si is an important configuration in order to realize a low loss and high power devices as well as one of the cost-effective solutions. Current collapse phenomena are discussed for GaN-HFETs on Si substrate, resulting in suppression of the current collapse due to using the conducting Si substrate. Furthermore, attempts for normally off GaN-FETs were examined. A hybrid metal-oxide-semiconductor HFET structure is a promising candidate for obtaining devices with a lower on-resistance (Ron) and a high breakdown voltage (Vb).
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