期刊
PROCEEDINGS OF THE IEEE
卷 96, 期 2, 页码 287-305出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2007.911060
关键词
gallium nitride; high electron mobility Transistors (HEMTS); microwave transistors; millimeter wave transistors; MMICs; reliability
The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high Output power density, high operation voltage and high input impedance. GaN-based RF power devices have made substantial progresses in the last decade. This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance. The reliability and manufacturing challenges are also discussed.
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