Debye temperature of 4H-SiC determined by X-ray powder diffraction

Crystal structure of 4H-SiC was refined from room-temperature X-ray powder diffraction data using the Rietveld refinement method. The refined lattice constants were determined to be a=b=3.079 93(0) angstrom, c=10.082 22(2) angstrom, and the refined overall temperature factor B=0.383(3) angstrom(2). Using the Debye approximation, the Debye temperature was successfully determined to be 1194.8 K. (C) 2009 International Centre for Diffraction Data. [DOI: 10.1154/1.3257905]