4.4 Article

Study on Mechanical, Thermal and Electrical Characterizations of Nano-SiC/Epoxy Composites

期刊

POLYMER JOURNAL
卷 41, 期 1, 页码 51-57

出版社

SPRINGERNATURE
DOI: 10.1295/polymj.PJ2008173

关键词

SiC/Epoxy Composites; Nanocomposites; Mechanical Properties; Thermal Properties; Dielectric Properties

资金

  1. National Natural Science Foundation of China [10776014]
  2. China Postdoctoral Science Foundation [20080431103]
  3. High Technical Foundation of Jiangsu Province of China [BG2007047]
  4. Natural Science Foundation of Jiangsu Province of China [BK2008407]
  5. Jiangsu Planned Projects for Postdoctoral Research Funds [0801023B]
  6. Special Foundation for Young Scholars of Nanjing University of' Science Technology [AB41339]
  7. Starting Foundation for Scholars of Nanjing University of Science Technology [A1341980]

向作者/读者索取更多资源

This report covers the results of a study on evaluating the effect of nano-SiC particles on mechanical, thermal and electrical properties of epoxy by lap shear, TGA. DSC and electrical tests. Epoxy Composites filled with micro-SiC particles were also studied for comparison. The mechanisms of performance improvement were discussed in detail. The results Showed that with identical loading, silane treated nano-SiC filled nanocomposites have the best properties. The volume resistivity decrease, dielectric constant F, increase and loss tangent tan(delta) increase by addition of silane treated nano-SiC particles are smaller than those by the other fillers. Silane treatment of nanoparticles improves each performance, including increase,., shear strength. thermal stability, volume resistivity and decreases epsilon and (delta). The addition of nano-SiC particles remarkably improves shear strength, epsilon and tan(delta), while slightly enhances thermal stability of epoxy. 8 vol.% silane treated nano-SiC/epoxy composite has the highest shear strength 10.6 MPa with the maximum enhancement, 80%, over the neat resin. It also has good temperature independence of dielectric properties and enough volume resistivity, which meet the demand of some microelectronics materials.

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