期刊
PLASMA PROCESSES AND POLYMERS
卷 9, 期 4, 页码 425-434出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/ppap.201100167
关键词
deposition kinetics; FT-IR; initiated PECVD; organosilicon precursors; structure retention
资金
- Total
A new deposition method, initiated PECVD (iPECVD), is proposed for the formation of organosilicon polymers with enhanced monomer structure retention compared to conventional PECVD. The quasi-selective fragmentation of an initiator is driven by a low power plasma discharge, as opposed to using a hot filament for initiator decomposition as in a standard, plasma-free initiated CVD (iCVD). The weak peroxide bond (O?O) in the initiator permits the formation of radical species at very low plasma power density (0.07?W?.?cm-2). Kinetic analysis of the deposition process indicates that the film formation rate follows the Arrhenius law, similarly to other iCVD process from organosilicon monomers.
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