4.5 Article

Thin Film Deposition in Capacitively Coupled Plasmas Fed with Bis(dimethylamino)-dimethylsilane and Oxygen: An FTIR study

期刊

PLASMA PROCESSES AND POLYMERS
卷 6, 期 8, 页码 506-511

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/ppap.200800206

关键词

FTIR; organosilicon; PECVD; plasma diagnostics; SiCN; SiOx; thin films

资金

  1. European Community [NMP3-CT-2003-505928]

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This paper deals with the deposition of thin films in capacitively coupled RF plasmas fed with bis(dimethylamino)dimethylsilane in mixture with argon. The effect of input power and of O-2 addition has been studied by means of a detailed FTIR investigation of the plasma phase and FTIR and XPS analyses of the deposits. High carbon content films with inorganic character are deposited in monomer-Ar discharges at high power. Input power rise results in higher monomer depletion but fragmentation appears not complete since SiMe, SiN, NMe absorptions are still evident. When the oxygen addition is high, a SiO2-like film is formed and the oxidation of the organic fraction appears directly correlated with CO2 density in gas phase.

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