期刊
ACTA MATERIALIA
卷 96, 期 -, 页码 18-23出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2015.06.002
关键词
Graphene; Silicon; Chemical vapor deposition; Carbon diffusion; Thermal conductivity
资金
- National Research Foundation of Korea (NRF) Grant - Korean Government (MSIP) [2007-0054845]
- Basic Science Research Program through the NRF [2009-0083540]
Direct growth of graphene on silicon (Si) through chemical vapor deposition has predominantly focused on surface-mediated processes due to the low carbon (C) solubility in Si. However, a considerable quantity of C atoms was incorporated in Si and formed Si1-xCx alloy with a reduced lattice dimension even in the initial stage of direct graphene growth. Subsequent high temperature annealing promoted active C out-diffusion, resulting in the formation of a graphitic layer on the Si surface. Furthermore, the significantly low thermal conductivity of the Si1-xCx alloy shows that the incorporated C atoms affect the properties of a semiconductor adjacent to the graphene. These findings provide a key guideline for controlling desirable properties of graphene and designing hybrid semiconductor/graphene architectures for various applications. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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