Effects of silicon nutrition on cadmium uptake, growth and photosynthesis of rice plants exposed to low-level cadmium

The effect of silicon (Si) nutrition on low-level cadmium (Cd) toxicity symptoms was investigated in hydroponically-grown rice seedlings (Oryza sativa L.). Silicon (0.0, 0.2, or 0.6 mM) was added when seedlings were 6 or 20 days old representing early (Si-E) or late (Si-L) Si treatment, respectively. Cadmium (0.0 or 2.5 mu M) was added when seedlings were 6 days old. Measurements included generation of CO2 and light response curves; chlorophyll fluorescence analysis; growth; and tissue-element content analysis. Our results showed that low-level Cd treatment generally inhibited growth and photosynthesis. However, the addition of 0.2 or 0.6 mM Si-E or Si-L significantly reduced root- and leaf-Cd content. Consequently, the addition of 0.6 mM Si-L significantly alleviated low-level Cd-induced inhibition of growth. Furthermore, 0.2 mM Si treatment significantly reduced g(s) compared to 0.0 or 0.6 mM Si without inhibiting A, especially in +Cd plants, suggesting an increase in instantaneous water-use-efficiency (IWUE). Additionally, in +Cd plants, the addition of 0.6 mM Si-E significantly reduced F-o but increased F-v/F-m, while treatment with 0.2 mM Si-L significantly increased q(P), suggesting an increase in light-use-efficiency. We thus, propose that 0.6 mM Si-L treatment is required for the alleviation of low-level Cd-mediated growth inhibition. Furthermore, we suggest that 0.2 mM Si concentration might be close to the optimum requirement for maximum Si-induced increase in IWUE in rice plants, especially when under low-level Cd-stress. Our results also suggest that Si alleviates low-level Cd toxicity by improving light-use-efficiency.