期刊
PHYSICS OF THE SOLID STATE
卷 54, 期 5, 页码 894-899出版社
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063783412050460
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The current status of developments in the field of ferroelectric memory devices has been considered. The rapidly growing market of non-volatile memory devices has been analyzed, and the current state of the art and prospects for the scaling of parameters of non-volatile memory devices of different types have been considered. The basic constructive and technological solutions in the field of the design of ferroelectric memory devices, as well as the roadmaps of the development of this technology, have been discussed.
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