期刊
PHYSICS LETTERS A
卷 376, 期 8-9, 页码 978-981出版社
ELSEVIER
DOI: 10.1016/j.physleta.2011.12.040
关键词
Thermoelectric figure of merit; ZnO nanowires
资金
- NUS [R-144-000-285-646]
- Asian Office of Aerospace Research and Development of the U.S. Air Force [AOARD-114018]
- Ministry of Science and Technology of China [2011CB933001]
By using first-principles electronic structure calculation and Boltzmann transport equation, we investigate the impact of gallium (Ga) doping on the thermoelectric property of [0001] zinc oxide nanowires (Zn1-xGaxO NWs). Our results show that the thermoelectric performance of the Zn1-xGaxO NWs is strongly dependent on the Ga contents. The maximum achievable room temperature thermoelectric figure of merit in Zn1-xGaxO NW can be increased by a factor of 2.5 at Ga content of 0.04, compared with the ZT of pure ZnO NWs. This may open up ZnO NW arrays applications in possible thermoelectric energy generator and cooler. (C) 2011 Elsevier B.V. All rights reserved.
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