Direct comparison of anisotropic magnetoresistance and planar Hall effect in epitaxial Fe3O4 thin films

The angular dependence of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) were studied as a function of temperatures from the same epitaxial Fe3O4 film on MgO(001) substrates. The PHE contains only a twofold angular dependence, but the AMR below 200 K is constituted with both twofold and fourfold symmetric terms. Our results also prove that the origin of the fourfold symmetry of AMR is related to the lattice symmetry rather than the spin scattering near the antiphase boundaries. (C) 2012 Elsevier B.V. All rights reserved.