期刊
PHYSICS LETTERS A
卷 376, 期 2, 页码 136-141出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physleta.2011.10.043
关键词
Valley polarization; Line defect; Graphene
资金
- National Nature Science Foundation of China [NNSFC10774055, NNSFC11074091]
- Specialized Research Fund for the Doctoral Program of Higher Education [SRFDP20070183130]
- National Found for Fostering Talents of Basic Science [J0730311]
We develop a tight-binding theory to study the electronic transport through an extended line defect in monolayer graphene. After establishing an analytical expression of the transmission probability, we clarify the following issues concerning the valley polarization in the electronic transport process. Firstly, we find that the valley polarization is robust in the total linear dispersion region. More interestingly, we find that the lattice deformation around the line defect play an important role in tuning the incident angle for complete transmission. Finally, we indicate that next nearest neighbor interaction only causes a small suppression to the valley polarization. (C) 2011 Elsevier B.V. All rights reserved.
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