期刊
PHYSICS LETTERS A
卷 372, 期 5, 页码 725-729出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physleta.2007.08.050
关键词
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Spin-polarized transports of relativistic electrons through graphene-based ferromagnet/insulator/ferromagnet (FG/IG/FG) single junctions have been investigated theoretically. Large oscillating tunnel magnetoresistance (TMR) has been found in monolayer and bilayer FG/IG/FG junctions. The oscillating amplitudes of TMR do not decrease with the increase of the thickness and the height of barrier, in contrast to the exponential decay in conventional ferromagnet/insulator/ferromagnet single junction. The physical origin for such a phenomenon has also been analyzed. It is anticipated to apply such a phenomenon to design the spin-polarized electron device based on the graphene materials. (c) 2007 Elsevier B.V. All rights reserved.
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