4.8 Article

Broadband Terahertz Generation via the Interface Inverse Rashba-Edelstein Effect

期刊

PHYSICAL REVIEW LETTERS
卷 121, 期 8, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.121.086801

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资金

  1. National Key Basic Research Program of China [2015CB921401]
  2. National Key Research and Development Program of China [2016YFA0300703, 2017YFA0303504]
  3. National Science Foundation of China [11734006, 11474066, 11434003, 11674068, 11734007, 11474056]
  4. Science Challenge Program of China [TZ2016004]
  5. Program of Shanghai Academic Research Leader [17XD1400400]
  6. DOE-BES (RW) [DE-FG02-05ER46237]

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Novel mechanisms for electromagnetic wave emission in the terahertz frequency regime emerging at the nanometer scale have recently attracted intense attention for the purpose of searching next-generation broadband THz emitters. Here, we report broadband THz emission, utilizing the interface inverse Rashba-Edelstein effect. By engineering the symmetry of the Ag/Bi Rashba interface, we demonstrate a controllable THz radiation (similar to 0.1-5 THz) waveform emitted from metallic Fe/Ag/Bi heterostructures following photoexcitation. We further reveal that this type of THz radiation can be selectively superimposed on the emission discovered recently due to the inverse spin Hall effect, yielding a unique film thickness dependent emission pattern. Our results thus offer new opportunities for versatile broadband THz radiation using the interface quantum effects.

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