Strong and Tunable Spin-Lifetime Anisotropy in Dual-Gated Bilayer Graphene

We report the discovery of a strong and tunable spin-lifetime anisotropy with excellent out-of-plane spin lifetimes up to 7.8 ns at 100 K in dual-gated bilayer graphene. Remarkably, this realizes the manipulation of spins in graphene by electrically controlled spin-orbit fields, which is unexpected due to graphene's weak intrinsic spin-orbit coupling (similar to 12 mu eV). We utilize both the in-plane magnetic field Hanle precession and oblique Hanle precession measurements to directly compare the lifetimes of out-of-plane vs in-plane spins. We find that near the charge neutrality point, the application of a perpendicular electric field opens a band gap and generates an out-of-plane spin-orbit field that stabilizes out-of-plane spins against spin relaxation, leading to a large spin-lifetime anisotropy (defined as the ratio between out-of-plane and in-plane spin lifetime) up to similar to 12 at 100 K. This intriguing behavior occurs because of the unique spin-valley coupled band structure of bilayer graphene. Our results demonstrate the potential for highly tunable spintronic devices based on dual-gated 2D materials.