4.8 Article

High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit

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PHYSICAL REVIEW LETTERS
卷 113, 期 22, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.113.220501

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  1. EPSRC
  2. EPSRC [EP/I028978/1] Funding Source: UKRI

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We implement all single-qubit operations with fidelities significantly above the minimum threshold required for fault-tolerant quantum computing, using a trapped-ion qubit stored in hyperfine atomic clock states of Ca-43(+). We measure a combined qubit state preparation and single-shot readout fidelity of 99.93%, a memory coherence time of T-2* = 50 sec, and an average single-qubit gate fidelity of 99.9999%. These results are achieved in a room-temperature microfabricated surface trap, without the use of magnetic field shielding or dynamic decoupling techniques to overcome technical noise.

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