期刊
PHYSICAL REVIEW LETTERS
卷 112, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.112.036802
关键词
-
资金
- Swiss National Science Foundation via NCCR QSIT (Quantum Science and Technology)
We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic field. Concomitantly with a local resistance exceeding the resistance quantum by an order of magnitude, we find a pronounced nonlocal resistance signal of almost similar magnitude. The coexistence of these two effects is reconciled in a model of counterpropagating and dissipative quantum Hall edge channels providing backscattering, shorted by a residual bulk conductivity.
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