期刊
PHYSICAL REVIEW LETTERS
卷 112, 期 21, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.112.216803
关键词
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资金
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
- Defense Advanced Research Projects Agency Microsystems Technology Office, MesoDynamic Architecture Program (MESO) [N66001-11-1-4105]
- FAME, STARnet, a Semiconductor Research Corporation program - MARCO
- DARPA
Both quantum spin Hall and quantum anomalous Hall states are novel states of quantum matter with promising applications. We propose junction quantum wells comprising II-VI, III-V, or IV semiconductors as a large class of new materials realizing the quantum spin Hall state. Especially, we find that the bulk band gap for the quantum spin Hall state can be as large as 0.1 eV. Furthermore, magnetic doping would induce the ferromagnetism in these junction quantum wells due to band edge singularities in the band-inversion regime and to realize the quantum anomalous Hall state.
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