期刊
PHYSICAL REVIEW LETTERS
卷 110, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.110.196804
关键词
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资金
- U.S. Department of Energy [DEFG02-07ER46459]
- National Science Foundation
- Nanoelectronics Research Initiative [DMR-1124696]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1124696] Funding Source: National Science Foundation
We demonstrate a link between the growth process, the stoichiometry of LaAlO3, and the interfacial electrical properties of LaAlO3/SrTiO3 heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1 x 10(-3) Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility. We discuss the relative contributions of intrinsic and extrinsic effects in controlling the physical properties of this widely studied system.
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