期刊
PHYSICAL REVIEW LETTERS
卷 110, 期 5, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.110.056803
关键词
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资金
- EPSRC [GR/S94148]
- University of Oxford
- Engineering and Physical Sciences Research Council [EP/I031014/1] Funding Source: researchfish
- EPSRC [EP/I031014/1] Funding Source: UKRI
Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In2O3(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrodinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.
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