期刊
PHYSICAL REVIEW LETTERS
卷 111, 期 1, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.111.017401
关键词
-
资金
- U.S. Department of Energy [DE-FG02-04ER-15618, DE-FG02-07ER-46386]
- Army Research Laboratory [W9113M-09-0075]
Positron annihilation spectra reveal isolated zinc vacancy (V-Zn) creation in single-crystal ZnO exposed to 193-nm radiation at 100 mJ/cm(2) fluence. The appearance of a photoluminescence excitation peak at 3.18 eV in irradiated ZnO is attributed to an electronic transition from the V-Zn acceptor level at similar to 100 meV to the conduction band. The observed V-Zn density profile and hyperthermal Zn+ ion emission support zinc vacancy-interstitial Frenkel pair creation by exciting a wide 6.34 eV Zn-O antibonding state at 193-nm photon-a novel photoelectronic process for controlled V-Zn creation in ZnO.
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