4.8 Article

Electrically Driven Nonreciprocity Induced by Interband Photonic Transition on a Silicon Chip

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PHYSICAL REVIEW LETTERS
卷 109, 期 3, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.109.033901

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资金

  1. National Science Foundation
  2. NSF through CIAN ERC [EEC-0812072]
  3. Brazilian Defense Ministry
  4. AFOSR-MURI program [FA9550-09-1-0704]

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We demonstrate electrically driven nonreciprocity on a silicon chip. By achieving an indirect interband photonic transition, we show that the transmission coefficients between two single-mode waveguides become dependent on the propagation directions only in the presence of the electrical drive. Our structure is characterized by a nonsymmetric scattering matrix identical to a linear magneto-optical device.

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