期刊
PHYSICAL REVIEW LETTERS
卷 109, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.109.196802
关键词
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资金
- Spain's MICINN [MAT2010-14902, CSD2010-00024, CSD2007-00050]
- Comunidad de Madrid [S2009/MAT-1467]
- PHC Picasso program [22885NH]
- Spanish MEC
- Fondation Nanosciences
Extensive scanning tunneling microscopy and spectroscopy experiments complemented by first-principles and parametrized tight binding calculations provide a clear answer to the existence, origin, and robustness of van Hove singularities (vHs) in twisted graphene layers. Our results are conclusive: vHs due to interlayer coupling are ubiquitously present in a broad range (from 1 degrees to 10 degrees) of rotation angles in our graphene on 6H-SiC(000-1) samples. From the variation of the energy separation of the vHs with the rotation angle we are able to recover the Fermi velocity of a graphene monolayer as well as the strength of the interlayer interaction. The robustness of the vHs is assessed both by experiments, which show that they survive in the presence of a third graphene layer, and by calculations, which test the role of the periodic modulation and absolute value of the interlayer distance. Finally, we clarify the role of the layer topographic corrugation and of electronic effects in the apparent moire contrast measured on the STM images.
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