期刊
PHYSICAL REVIEW LETTERS
卷 108, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.108.206802
关键词
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资金
- U.S. Department of Energy [DE-AC36-08GO28308]
- National Research Foundation of Korea [R17-2008-033-01000-0]
- National Science Foundation of China
- Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
- National Research Foundation of Korea [과06A1102, 2008-0060612] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Developing approaches to effectively control the charge and magnetic states is critical to the use of magnetic nanostructures in quantum information devices but is still challenging. Here we suggest that the magnetic and charge states of transition-metal (TM) doped single-layer boron-nitride (SLBN) systems can be easily controlled by the (internal) defect engineering and (external) electric fields (E-ext). The relative positions and symmetries of the in-gap levels induced by defect engineering and the TM d-orbital energy levels effectively determine the charge states and magnetic properties of the TM/SLBN system. Remarkably, the application of an E-ext can easily control the size of the crystal field splitting of the TM d orbitals and thus, leading to the spin crossover in TM/SLBN, which could be used as E-ext-driven nonvolatile memory devices. Our conclusion obtained from TM/SLBN is valid generally in other TM adsorbed layered semiconductors.
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