期刊
PHYSICAL REVIEW LETTERS
卷 108, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.108.206402
关键词
-
资金
- Center on Functional Engineered Nano Architectonics (FENA)
- Department of Energy [DE-AC02-76SF00515]
- Center for Integrated Nanotechnologies
- LDRD through the LANL [DE-AC5206NA25396]
- UCOP [TR-027]
In this Letter we present detailed study of the density of states near defects in Bi2Se3. In particular, we present data on the commonly found triangular defects in this system. While we do not find any measurable quasiparticle scattering interference effects, we do find localized resonances, which can be well fitted by theory [R.R. Biswas and A.V. Balatsky, Phys. Rev. B 81, 233405(R) (2010)] once the potential is taken to be extended to properly account for the observed defects. The data together with the fits confirm that while the local density of states around the Dirac point of the electronic spectrum at the surface is significantly disrupted near the impurity by the creation of low-energy resonance state, the Dirac point is not locally destroyed. We discuss our results in terms of the expected protected surface state of topological insulators.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据