Room Temperature Coherent Spin Alignment of Silicon Vacancies in 4H- and 6H-SiC

We report the realization of the optically induced inverse population of the ground-state spin sublevels of the silicon vacancies (V-Si) in silicon carbide (SiC) at room temperature. The data show that the probed silicon vacancy spin ensemble can be prepared in a coherent superposition of the spin states. Rabi nutations persist for more than 80 mu s. Two opposite schemes of the optical alignment of the populations between the ground-state spin sublevels of the silicon vacancy upon illumination with unpolarized light are realized in 4H- and 6H-SiC at room temperature. These altogether make the silicon vacancy in SiC a very favorable defect for spintronics, quantum information processing, and magnetometry.