4.8 Article

Correlated Charged Impurity Scattering in Graphene

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PHYSICAL REVIEW LETTERS
卷 107, 期 20, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.107.206601

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资金

  1. NSF [DMR 08-04976]
  2. U.S. ONR MURI

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We study electron transport properties of graphene in the presence of correlated charged impurities via adsorption and thermal annealing of potassium atoms. For the same density of charged scattering centers, the sample mobility sensitively depends on temperature which sets the correlation length between the scatterers. The data are well-understood by a recent theory that allows us to quantitatively extract the temperature dependence of the correlation length. Impurity correlations also offer a self-consistent explanation to the puzzling sublinear carrier-density dependence of conductivity commonly observed in monolayer graphene samples on substrates.

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