期刊
PHYSICAL REVIEW LETTERS
卷 107, 期 6, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.107.067001
关键词
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资金
- National Natural Science Foundation of China [2011CB00101, 51021091]
- Ministry of Science and Technology of China
- Chinese Academy of Sciences
We systematically investigated the in-plane resistivity anisotropy of electron-underdoped EuFe(2-x)Co(x)As(2) and BaFe(2-x)Co(x)As(2) and hole-underdoped Ba(1-x)K(x)Fe(2)As(2). Large in-plane resistivity anisotropy was found in the former samples, while tiny in-plane resistivity anisotropy was detected in the latter ones. When it is detected, the anisotropy starts above the structural transition temperature and increases smoothly through it. As the temperature is lowered further, the anisotropy takes a dramatic enhancement through the magnetic transition temperature. We found that the anisotropy is universally tied to the presence of T-linear behavior of resistivity. Our results demonstrate that the nematic state is caused by electronic degrees of freedom, and the microscopic orbital involvement in the magnetically ordered state must be fundamentally different between the hole- and electron-doped materials.
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