4.8 Article

Impact of Valley Polarization on the Resistivity in Two Dimensions

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PHYSICAL REVIEW LETTERS
卷 106, 期 19, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.106.196403

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  1. Nanoscience Foundation of Grenoble
  2. JST

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We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.

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