期刊
PHYSICAL REVIEW LETTERS
卷 107, 期 21, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.107.216807
关键词
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This work elucidates the role of the Schottky junction in the electronic transport of nanometer-scale transistors. In the example of Schottky barrier silicon nanowire field effect transistors, an electrical scanning probe technique is applied to examine the charge transport effects of a nanometer-scale local top gate during operation. The results prove experimentally that Schottky barriers control the charge carrier transport in these devices. In addition, a proof of concept for a reprogrammable nonvolatile memory device based on band bending at the Schottky barriers will be shown.
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