期刊
PHYSICAL REVIEW LETTERS
卷 105, 期 17, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.176602
关键词
-
资金
- Ministry of Science & Technology of China
- NSF-China
- Chinese Academy of Sciences
We report that Bi2Se3 thin films can be epitaxially grown on SrTiO3 substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.
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