期刊
PHYSICAL REVIEW LETTERS
卷 105, 期 5, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.056802
关键词
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资金
- Cluster of Excellence Nanospintronics'' (LExI Hamburg)
- FOM (The Netherlands)
- computer time at HLRN (Germany)
- NCF (The Netherlands)
- [SFB 668]
We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means of density functional calculations various organic groups as well as adatoms such as H absorbed to graphene are shown to create midgap states within +/- 0.03 eV around the neutrality point. A low energy tight-binding description is mapped out. Boltzmann transport theory as well as a numerically exact Kubo formula approach yield the conductivity of graphene contaminated with these realistic impurities in accordance with recent experiments.
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