期刊
PHYSICAL REVIEW LETTERS
卷 105, 期 26, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.266806
关键词
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资金
- NSF [DMR07-05941, DMR08-04413]
- Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering Division, U.S. Department of Energy [DE-AC02-05CH11231]
- Swiss NSF [PBELP2-123086]
- Swiss National Science Foundation (SNF) [PBELP2-123086] Funding Source: Swiss National Science Foundation (SNF)
We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces the spin polarization of the surface states to similar to 50% in both cases; this reduction is absent in simple models but of important implications to essentially any spintronic application. We propose a way of controlling the magnitude of spin polarization associated with a charge current in thin films of topological insulators by means of an external electric field. The proposed dual-gate device configuration provides new possibilities for electrical control of spin.
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