4.8 Article

Hyperfine-Field-Mediated Spin Beating in Electrostatically Bound Charge Carrier Pairs

期刊

PHYSICAL REVIEW LETTERS
卷 104, 期 1, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.104.017601

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资金

  1. American Chemical Society [PRF48916-DNI10]
  2. Department of Energy [DE-SC0000909]
  3. National Science Foundation [CHE-ASC 0748473]
  4. David and Lucile Packard Foundation
  5. U.S. Department of Energy (DOE) [DE-SC0000909] Funding Source: U.S. Department of Energy (DOE)

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Organic semiconductors offer a unique environment to probe the hyperfine coupling of electronic spins to a nuclear spin bath. We explore the interaction of spins in electron-hole pairs in the presence of inhomogeneous hyperfine fields by monitoring the modulation of the current through an organic light emitting diode under coherent spin-resonant excitation. At weak driving fields, only one of the two spins in the pair precesses. As the driving field exceeds the difference in local hyperfine field experienced by electron and hole, both spins precess, leading to pronounced spin beating in the transient Rabi flopping of the current. We use this effect to measure the magnitude and spatial variation in hyperfine field on the scale of single carrier pairs, as required for evaluating models of organic m agnetoresi stance, improving organic spintronics devices, and illuminating spin decoherence mechanisms.

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