期刊
PHYSICAL REVIEW LETTERS
卷 105, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.197603
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资金
- U.S. Department of Energy, Office of Science [DE-AC02-05CH1123]
- Oak Ridge National Laboratory by the Scientific User Facilities Division, U.S. Department of Energy
- Alexander von Humboldt Foundation
The transport physics of domain wall conductivity in La-doped bismuth ferrite (BiFeO3) has been probed using variable temperature conducting atomic force microscopy and piezoresponse force microscopy in samples with arrays of domain walls in the as-grown state. Nanoscale current measurements are investigated as a function of bias and temperature and are shown to be consistent with distinct electronic properties at the domain walls leading to changes in the observed local conductivity. Our observation is well described within a band picture of the observed electronic conduction. Finally, we demonstrate an additional degree of control of the wall conductivity through chemical doping with oxygen vacancies, thus influencing the local conductive state.
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