期刊
PHYSICAL REVIEW LETTERS
卷 104, 期 14, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.104.146801
关键词
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资金
- DARPA/HRL CERA
- SRC/FCRP FENA
- U.S. ARO
- Office of BES, U.S. DOE at ORNL [DE-AC-05-00OR22725]
- UT-Battelle, LLC
Using calculations from first principles we show how specific interface modifications can lead to a fine-tuning of the doping and band alignment in epitaxial graphene on SiC. Upon different choices of dopants, we demonstrate that one can achieve a variation of the valence band offset between the graphene Dirac point and the valence band edge of SiC up to 1.5 eV. Finally, via appropriate magnetic doping one can induce a half-metallic behavior in the first graphene monolayer. These results clearly establish the potential for graphene utilization in innovative electronic and spintronic devices.
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