期刊
PHYSICAL REVIEW LETTERS
卷 104, 期 25, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.104.256803
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资金
- Engineering and Physical Sciences Research Council, UK [EP/H012575/1]
- Lundbeck foundation
- Danish National Research Council
- Spanish government [MAT2007-66129]
- Engineering and Physical Sciences Research Council [EP/H012575/1, EP/G004447/1] Funding Source: researchfish
- EPSRC [EP/G004447/1, EP/H012575/1] Funding Source: UKRI
An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.
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