4.8 Article

Robustness of Topologically Protected Surface States in Layering of Bi2Te3 Thin Films

期刊

PHYSICAL REVIEW LETTERS
卷 105, 期 18, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.186801

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资金

  1. NSF [DMR-0804665]
  2. U.S. DOE [DE-FG05-92ER40677, DE-FG02-08ER46532]
  3. Direct For Mathematical & Physical Scien
  4. Division Of Materials Research [0804665] Funding Source: National Science Foundation
  5. U.S. Department of Energy (DOE) [DE-FG02-08ER46532] Funding Source: U.S. Department of Energy (DOE)

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Bulk Bi2Te3 is known to be a topological insulator. We investigate surface states of Bi2Te3(111) thin films of one to six quintuple layers using density-functional theory including spin-orbit coupling. We construct a method to identify topologically protected surface states of thin film topological insulators. Applying this method to Bi2Te3 thin films, we find that the topological nature of the surface states remains robust with the film thickness and that the films of three or more quintuple layers have topologically nontrivial surface states, which agrees with experiments.

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