期刊
PHYSICAL REVIEW LETTERS
卷 104, 期 9, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.104.096801
关键词
-
资金
- U.S. Department of Defense
We demonstrate direct detection of individual electron spin states, together with measurement of spin relaxation time (T-1), in silicon metal-oxide-semiconductor-based quantum dots (QD). Excited state spectroscopy of the QD has been performed using a charge-sensing technique. T-1 of single spin excited states has been done in the time domain by a pump-and-probe method. For an odd and an even number of electrons, we found a magnetic field dependent and invariant T-1, respectively.
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