4.8 Article

Fully Overheated Single-Electron Transistor

期刊

PHYSICAL REVIEW LETTERS
卷 104, 期 19, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.104.196805

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  1. Finnish Academy of Science and Letters
  2. Academy of Finland

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We consider the fully overheated single- electron transistor, where the heat balance is determined entirely by electron transfers. We find three distinct transport regimes corresponding to cotunneling, single- electron tunneling, and a competition between the two. We find an anomalous sensitivity to temperature fluctuations at the crossover between the two latter regimes that manifests in an exceptionally large Fano factor of current noise.

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