期刊
PHYSICAL REVIEW LETTERS
卷 102, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.102.195505
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资金
- CREST
- MEXT [19054017]
- International Balzan Foundation
- National Science Foundation of China [60802003]
A freestanding single layer of hexagonal boron nitride (h-BN) has been successfully fabricated by controlled energetic electron irradiation through a layer-by-layer sputtering process. We have successfully resolved atomic defects in h-BN with triangle shapes by means of an aberration corrected high-resolution transmission electron microscopy with exit-wave reconstruction. Boron monovacancies are found to be preferably formed and the dominating zigzag-type edges are proved to be nitrogen terminated.
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