期刊
PHYSICAL REVIEW LETTERS
卷 102, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.102.196803
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资金
- NSF NIRT [0506830]
- DOE [DE-FG02-00ER45805]
- NSF CMMI [0833084]
- [DE-FG02-08ER46516]
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [833150, 0833084] Funding Source: National Science Foundation
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [0506830] Funding Source: National Science Foundation
The mechanism for phonon scattering by nanostructures and by point defects in nanostructured silicon (Si) and the silicon germanium (Ge) alloy and their thermoelectric properties are investigated. We found that the thermal conductivity is reduced by a factor of 10 in nanostructured Si in comparison with bulk crystalline Si. However, nanosize interfaces are not as effective as point defects in scattering phonons with wavelengths shorter than 1 nm. We further found that a 5 at. % Ge replacing Si is very efficient in scattering phonons shorter than 1 nm, resulting in a further thermal conductivity reduction by a factor of 2, thereby leading to a thermoelectric figure of merit 0.95 for Si(95)Ge(5), similar to that of large grained Si(80)Ge(20) alloys.
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